Organic semiconductor material and organic optoelectronic device using the same
AssigneeRaynergy Tek Incorporation
InventorsCheng-Chang Lai, Yu-Tang Hsiao
Life of this patent
Estimating the term…
Loading patent…
AssigneeRaynergy Tek Incorporation
InventorsCheng-Chang Lai, Yu-Tang Hsiao
Estimating the term…
An organic semiconductor material comprising a structure of Formula I: The organic semiconductor material has an optical bandgap lower than 1.15 eV, and exhibits good solubility and thermal stability. The present invention also provides an organic optoelectronic device comprising a first electrode, an active layer, and a second electrode. The active layer contains the organic semiconductor material. The organic optoelectronic device is applied to a short-wave infrared (SWIR) organic photodetector, and is fabricated using non-halogenated solvents. The organic optoelectronic device exhibits a low dark current density, excellent responsivity and detectivity in the short-wave infrared region, as well as good thermal stability.
An organic semiconductor material comprising a structure of Formula I:
Dependencies are inferred from the claim text.