Semiconductor structure and fabricating method thereof

Abstract

A semiconductor structure includes a substrate, a first group III nitride structure disposed on the substrate, a plurality of carbon blocks, and a second group III nitride structure. An upper surface of the first group III nitride structure has a plurality of pits. The carbon blocks are located in the pits. The second group III nitride structure is disposed on the first group III nitride structure and the carbon blocks. A method of fabricating the semiconductor structure includes the following operations. The first group III nitride structure is formed on the substrate, in which the upper surface of the first group III nitride structure has the pits. The carbon blocks are formed in the pits. The second group III nitride structure is formed on the first group III nitride structure and the carbon blocks.

Dependencies are inferred from the claim text.