Semiconductor device

A semiconductor device, comprising:

• a substrate including a first well having a first conductivity type and a second well having a second conductivity type;
• first and second impurity patterns of the first conductivity type disposed on the first well;
• third and fourth impurity patterns of the second conductivity type disposed on the second well;
• a first passivation pattern disposed on a first surface of the substrate;
• and
• a second passivation pattern disposed on a second surface opposite to the first surface of the substrate,
• wherein:
• the first passivation pattern is disposed between the first impurity pattern and the third impurity pattern with the first impurity pattern at a first side of the first passivation pattern and the third impurity pattern at a second side of the first passivation pattern opposite the first side.

A semiconductor device, comprising:

• a substrate including a fin region including a first well of a first conductivity type and a second well of a second conductivity type, wherein the fin region extends in a first direction;
• a first impurity pattern of the first conductivity type disposed on the first well;
• a second impurity pattern of the second conductivity type disposed on the second well;
• a first passivation pattern disposed on a first surface of the substrate and extending lengthwise in a second direction intersecting with the first direction;
• a second passivation pattern disposed on a second surface opposite to the first surface of the substrate;
• and
• an insulating pattern disposed on the first passivation pattern,
• wherein:
• the first passivation pattern is disposed between the first impurity pattern and the second impurity pattern in the second direction;
• the first passivation pattern includes a first portion extending in the first direction and disposed on the first surface of the substrate, a second portion extending from a first end of the first portion along a side surface of the first impurity pattern in a third direction intersecting with the first and second directions, and a third portion extending from a second end of the first portion along a side surface of the second impurity pattern in the third direction;
• and
• the insulating pattern is disposed between the second portion and the third portion.