Radio frequency amplifier with double cascode structure

A radio frequency (RF) amplifier, comprising

• a first metal-oxide-semiconductor (MOS) field-effect transistor (first MOSFET) having a first gate terminal, a first source terminal, and a first drain terminal, a second MOSFET having a second gate terminal, a second source terminal, and a second drain terminal, and a third MOSFET having a third gate terminal, a third source terminal, and a third drain terminal which are connected in series, wherein
• the first MOSFET has an input signal terminal connected to the first gate terminal, receives an input signal through the first gate terminal, and has the first drain terminal connected to the second source terminal of the second MOSFET,
• the second MOSFET has the second drain terminal connected to the third source terminal of the third MOSFET,
• the third MOSFET outputs an output signal by connecting the third drain terminal thereof to an output signal terminal,
• a first feedback capacitor for increasing stability of the amplifier is connected between the third drain terminal of the third MOSFET and the second gate terminal of the second MOSFET, and
• a second feedback capacitor for increasing stability of the amplifier is connected between the second gate terminal of the second MOSFET and the first source terminal of the first MOSFET.