Semiconductor laser element and light-emitting device

A semiconductor laser element, comprising:

• a semiconductor stack,
• the semiconductor stack comprising:
• a first semiconductor layer, a first wave guide layer, an active layer, a second wave guide layer, and a second semiconductor layer stacked sequentially from bottom to top,
• wherein,
• the first semiconductor layer is an N-type doped layer,
• the second semiconductor layer is a P-type doped layer,
• in a direction away from the active layer, the second semiconductor layer is sequentially provided with an electron barrier layer and a second coating layer;
• in the electron barrier layer, a P-type dopant has at least one doping concentration peak,
• a doping concentration of the P-type dopant at the doping concentration peak is less than a maximum doping concentration of the P-type dopant in the second semiconductor layer, and,
• in a direction gradually approaching the electron barrier layer, a doping concentration of the P-type dopant in the second coating layer has a plurality of partitions, and a doping concentration curve of the P-type dopant decreases partition by partition along the plurality of partitions.