Semiconductor laser with interrupted grooves
AssigneeExcelitas Canada, Inc.
InventorsSasa Ristic, Dumitru Grigore Huminic, Sylvain Laframboise
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Abstract
The inventors have developed technology to facilitate improved performance of broad area lasers and improved wire bonding configurations, which are described herein. As an example, broad area lasers include a waveguide ridge positioned on a semiconductor between adjacent grooves. The inclusion of horizontal ridges to transect the grooves at the exit facet and/or along the length of the waveguide ridge of the laser to connect the semiconductor waveguide ridge with the adjoining substrate may improve the power output and/or quality of the beam profile of the broad area semiconductor laser.
Claims20
An integrated semiconductor laser comprising:
- a semiconductor substrate including a plurality of semiconductor layers having a transverse axis aligned with an optical axis of the integrated semiconductor laser, the plurality of semiconductor layers including at least one active layer;
- a waveguide ridge formed from the plurality of semiconductor layers and extending along the transverse axis between a front facet and a back facet of the integrated semiconductor laser;
- a plurality of grooves disposed on opposing sides of the waveguide ridge, wherein the plurality of grooves is elongated along the transverse axis;
- and
- at least one lateral ridge formed from the plurality of semiconductor layers and extending across at least one of the plurality of grooves.
An integrated semiconductor laser comprising:
- a semiconductor substrate including a plurality of semiconductor layers having a transverse axis aligned with an optical axis of the integrated semiconductor laser, the plurality of semiconductor layers including at least one active layer;
- a waveguide ridge formed from the plurality of semiconductor layers and extending along the transverse axis between a front facet and a back facet of the integrated semiconductor laser;
- a plurality of grooves disposed on opposing sides of the waveguide ridge, wherein the plurality of grooves is elongated along the transverse axis;
- and
- at least one lateral ridge formed from the plurality of semiconductor layers and positioned between two of the plurality of grooves to connect the waveguide ridge to an outer portion of the substrate.
An integrated semiconductor laser comprising:
- a semiconductor substrate including a plurality of semiconductor layers having a transverse axis aligned with an optical axis of the integrated semiconductor laser, the plurality of semiconductor layers including at least one active layer;
- a waveguide ridge disposed through the plurality of semiconductor layers and extending along the transverse axis between a front facet and a back facet of the integrated semiconductor laser;
- and
- a plurality of grooves disposed on opposing sides of the waveguide ridge, wherein the plurality of grooves is elongated along the transverse axis, and optical confinement of the waveguide ridge by the plurality of grooves varies along the transverse axis.
Dependencies are inferred from the claim text.