Substrate support unit and substrate processing apparatus including the same

A substrate processing apparatus comprising:

• a chamber body for processing of a substrate using plasma;
• and
• a substrate support unit disposed inside the chamber body to hold the substrate,
• wherein the substrate support unit comprises:
• a dielectric plate comprising a chucking electrode for adsorption of the substrate;
• a bias electrode provided inside the dielectric plate at a position below the chucking electrode to control plasma treatment process characteristics;
• and
• a bias power line configured to supply power to the bias electrode, and
• wherein the bias power line branches into a plurality of lines, and the plurality of lines forms junction portions together with the bias electrode in a region outside the substrate.

A substrate processing apparatus comprising:

• a chamber body for processing of a substrate using plasma;
• and
• a substrate support unit disposed inside the chamber body to hold the substrate,
• wherein the substrate support unit comprises:
• a dielectric plate comprising a chucking electrode for adsorption of the substrate;
• a base plate disposed below the dielectric plate, the base plate functioning as a support;
• an adhesive layer joining the dielectric plate and the base plate to each other;
• a bias electrode provided inside the dielectric plate at a position below the chucking electrode to control plasma treatment process characteristics, the bias electrode extending in a diameter direction to an edge of the substrate adsorbed on and held by the dielectric plate;
• and
• a bias power line configured to supply power to the bias electrode,
• wherein the bias power line branches into a plurality of lines, and the plurality of lines forms a plurality of junction portions together with the bias electrode in a region outside the substrate and a region inside the substrate,
• wherein the plurality of lines branching from the bias power line is arranged inside the adhesive layer and extends to the plurality of junction portions with the bias electrode,
• wherein the plurality of junction portions is formed through brazing,
• wherein the substrate support unit further comprises a brazing cover provided at each of the plurality of junction portions, the brazing cover being configured to hold a filler metal, melted by heat treatment, at each of the plurality of junction portions,
• wherein the brazing cover comprises:
• a cover body having a disc shape;
• a line holder formed at a central portion of the cover body so as to receive the bias power line fitted thereinto;
• and
• an outer wall extending along an outer circumference of the cover body,
• wherein the filler metal is held in a recess defined by the cover body and the outer wall, and
• wherein each of the plurality of lines branching from the bias power line has a plurality of trenches formed in an end thereof to be joined to the bias electrode, the plurality of trenches serving to accelerate capillary action during a brazing process.