Memory generating pass/fail information and operating method of memory
AssigneeSK hynix Inc.
InventorsJae KWON, Chae Hyoun PARK
Life of this patent
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Abstract
A memory includes a cell array including a plurality of memory cells, a pass/fail determination circuit configured to divide multi-bit data, which is read from memory cells selected by row and column addresses among the plurality of memory cells, into a plurality of groups and determine whether data is “pass” or “fail” for each group, and a section fail determination circuit configured to determine section fail information of a section, which corresponds to the row and column addresses, as “fail” when a quantity of groups determined as “fail” by the pass/fail determination circuit among the plurality of groups is greater than or equal to a first threshold value.
Claims16
A memory comprising:
- a cell array including a plurality of memory cells and providing read data from the plurality of memory cells selected by row and column addresses;
- a pass/fail determination circuit configured to divide the read data into a plurality of multi-bit data groups and to determine whether each multi-bit data group is “pass” or “fail”;
- and
- a section fail determination circuit configured to determine section fail information of sections, which correspond to the row and column addresses and each section associated with one of the plurality of multi-bit data groups, as “fail” when the number of the plurality of multi-bit data groups determined as “fail” by the pass/fail determination circuit is greater than or equal to a first threshold value.
An operating method of a memory, the operating method comprising:
- reading data of memory cells selected by a row address and a column address;
- dividing the data read from the memory cells into a plurality of groups;
- determining whether data is “pass” or “fail” for each group;
- and
- generating section fail information of a section, which corresponds to the row and column addresses, as “fail” when a number of groups from the plurality of groups determined as “fail” by a pass/fail determination circuit is greater than or equal to a first threshold value.
Dependencies are inferred from the claim text.