Mask for euv lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYun-Yue LIN
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Abstract
A mask for extreme ultraviolet (EUV) lithography includes a multilayer (ML) stack including alternating metal and semiconductor layers disposed over a first surface of a mask substrate, a capping layer disposed over the ML stack, and an absorber layer disposed over the capping layer. An image pattern is formed in the absorber layer. A border layer surrounding the image pattern is disposed over the absorber layer.
Claims20
A mask for extreme ultraviolet (EUV) lithography, the mask comprising:
- a circuit region comprising an absorber layer disposed over a reflective layer;
- and
- a black border region comprising a resist material disposed over the absorber layer disposed over the reflective layer, wherein the black border region is formed outside the circuit region in plan view.
A mask for extreme ultraviolet (EUV) lithography, the mask comprising:
- an absorber layer disposed over a reflective layer, wherein the absorber layer includes a patterned region;
- and
- a black border region disposed over the absorber layer and outside the patterned region.
A mask for extreme ultraviolet (EUV) lithography, the mask comprising:
- an absorber layer disposed over a substrate;
- and
- a cured resist layer disposed over a portion of the absorber layer in plan view, wherein the cured resist layer has a reflectance of less than 3% for wavelengths in a range from 5 nm to nm.
Dependencies are inferred from the claim text.