A method of depositing a material layer onto a workpiece, comprising:
- at a semiconductor processing system including the workpiece arranged within an interior of a chamber body and an injector apparatus including an injector holder having an injector protrusion;
- a reactor flange have a reactor protrusion;
- a coupling member;
- and a connector body configured to mechanically couple the injector holder, the coupling member, and the reactor flange, the connector body configured to compress the coupling member between the injector holder and the reactor flange;
- seating the workpiece within the interior of the chamber body;
- heating the workpiece to a predetermined material layer deposition temperature;
- exposing the workpiece to a material layer precursor;
- and
- depositing the material layer onto the workpiece using the material layer precursor.