Oxide semiconductor, manufacturing method therefor, and semiconductor device comprising same

Abstract

An Al—Sb—O-based oxide semiconductor containing aluminum (Al) and antimony (Sb) is disclosed. The Al—Sb—O-based oxide semiconductor has excellent electrical conductivity and band gap, such that the semiconductor can be applied to thin film transistors and the like. Methods for manufacturing the oxide semiconductor are also disclosed. The method includes mixing a first precursor solution containing an aluminum precursor and a second precursor solution containing an antimony precursor to prepare a sol-gel solution; and coating the sol-gel solution on a substrate to form an oxide semiconductor thin film, or sputtering-depositing an aluminum precursor and an antimony precursor on a substrate to form an oxide semiconductor thin film containing aluminum and antimony.

Dependencies are inferred from the claim text.