Power module

A power module comprising:

• a first semiconductor device having a first surface, a second surface opposite to the first surface, a first electrode provided on the first surface, and a second electrode provided on the second surface;
• a second semiconductor device having a third surface, a fourth surface opposite to the third surface, a third electrode provided on the third surface, and a fourth electrode provided on the fourth surface;
• a first insulating base material having a fifth surface bonded with the first semiconductor device, and a sixth surface opposite to the fifth surface;
• a second insulating base material having a seventh surface bonded with the second semiconductor device, and an eighth surface opposite to the seventh surface;
• a first conductive member penetrating the first insulating base material, electrically connected to the first electrode, and stacked on the sixth surface of the first insulating base material;
• a second conductive member electrically connected to the second electrode;
• a third conductive member penetrating the second insulating base material, electrically connected to the third electrode, and stacked on the eighth surface of the second insulating base material;
• a fourth conductive member electrically connected to the fourth electrode;
• a fifth conductive member electrically connecting the first conductive member and the fourth conductive member;
• an insulating film having a ninth surface facing the first conductive member and the second conductive member, and a tenth surface facing the third conductive member and the fourth conductive member;
• a first conductive layer provided on the ninth surface and electrically connected to the second conductive member;
• and
• a second conductive layer provided on the tenth surface and electrically connected to the third conductive member,
• wherein the first conductive layer and the second conductive layer overlap in a plan view.