Semiconductor Device and Method of Fabricating the Same

Abstract

Semiconductor device and method of fabricating the same, includes a substrate, a first dielectric layer and a second dielectric layer, a bonding interface layer, and a plurality of dummy vias. The first dielectric layer and the second dielectric layer are stacked in sequence on the substrate. The bonding interface layer is disposed between the first dielectric layer and the second dielectric layer, wherein the bonding interface layer includes a first interface layer and a second interface layer stacked in sequence. The plurality of dummy vias are disposed within one of the first dielectric layer and the second dielectric layer, being located at only one side of the bonding interface layer in a vertical direction of the substrate.

Dependencies are inferred from the claim text.