Photodetection element, image sensor, and manufacturing method of photodetection element
AssigneeFUJIFILM Corporation
InventorTakashi GOTO
Life of this patent
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Abstract
Provided are a photodetector element having a pixel having a photoelectric conversion element, an image sensor, and a method for manufacturing a photodetector element, in which the pixels have a light detection pixel and an optical black pixel, the photoelectric conversion element has a quantum dot layer that includes quantum dots and has a maximal absorption wavelength of an absorbance present in a wavelength range of 900 to 1,700 nm, a first electrode, and a second electrode, the optical black pixel has a light shielding film on a light incident side of the photoelectric conversion element, and the light shielding film includes a resin.
Claims13
A photodetector element comprising:
- a pixel having a photoelectric conversion element,
- wherein the pixels have a light detection pixel and an optical black pixel,
- the photoelectric conversion element has a quantum dot layer that includes quantum dots and has a maximal absorption wavelength of an absorbance present in a wavelength range of 900 to 1,700 nm, a first electrode provided on a light incident side of the quantum dot layer, and a second electrode provided on a surface of the quantum dot layer on a side opposite to a side on which the first electrode is provided, and
- the optical black pixel has a light shielding film on a light incident side of the photoelectric conversion element, and the light shielding film includes a resin.
A method for manufacturing a photodetector element having a pixel having a photoelectric conversion element, the method comprising:
- a step of applying a composition for forming a light shielding film onto the photoelectric conversion element to form a composition layer, and exposing the composition layer two or more times to form a light shielding film,
- wherein the pixels have a light detection pixel and an optical black pixel,
- the photoelectric conversion element has a quantum dot layer that includes quantum dots and has a maximal absorption wavelength of an absorbance present in a wavelength range of 900 to 1,700 nm, a first electrode provided on a light incident side of the quantum dot layer, and a second electrode provided on a surface of the quantum dot layer on a side opposite to a side on which the first electrode is provided, and
- the optical black pixel has a light shielding film on a light incident side of the photoelectric conversion element, and the light shielding film includes a resin.
Dependencies are inferred from the claim text.