Two-dimensional quantum light emitting device

A two-dimensional quantum light emitter comprising:

• a substrate;
• a bottom monolayer made of a 2D semiconductor material disposed on top of the substrate;
• a top monolayer made of the 2D semiconductor material disposed on top of the bottom monolayer, wherein the top monolayer is twisted about a vertical axis with respect to the bottom monolayer to create an active Moire periodic potential region at an interface between the top and bottom monolayers;
• a positive electrode disposed on top of the top monolayer;
• and
• a negative electrode disposed between the substrate and the bottom monolayer, wherein the positive and negative electrodes are configured to provide an electrical current to the active Moire periodic potential region.

A method of tuning an emitter's energy bandstructure comprising:

• providing a substrate;
• depositing a negative electrode on a top surface of the substrate;
• growing a bottom monolayer made of 2D semiconductor material on the top surface of the substrate and on top of the negative electrode;
• stacking a top monolayer made of the 2D semiconductor material on top of the bottom monolayer at a twist angle so as to create an active Moire periodic potential region at an interface between top and bottom monolayers;
• depositing a top electrode on a top surface of the top electrode;
• providing an electrical current to the active Moire periodic potential region to cause the positive electrode to inject holes into the top monolayer and the negative electrode to inject electrons into the bottom monolayer such that the electrons and holes combine into excitons trapped in the active Moire periodic potential region;
• allowing the excitons to recombine and radiate from the top monolayer as single photons;
• depositing a top-gate dielectric encapsulation layer on top of the top monolayer and the positive electrode;
• attaching a top-gate electrode to a top of the top-gate dielectric encapsulation layer;
• and
• producing with the top-gate electrode a top-gate voltage that induces a vertical electric field through the top and bottom monolayers so as to modulate an optical bandgap of the active Moire periodic potential region.