Metal-ferroelectric-metal device comprising two dimensional van der waals-bonded transition metal chalcogenide interfacial layer and method for manufacturing the same

Abstract

The present disclosure provides a metal-ferroelectric-metal device with a two-dimensional van der Waals-bonded transition metal chalcogenide interfacial layer, and a method for manufacturing the same. More particularly, the present disclosure provides a metal-ferroelectric-metal device with a two-dimensional van der Waals-bonded transition metal chalcogenide interfacial layer to improve crystallinity or domain alignment of the ferroelectric material, and a method for manufacturing the same.

Dependencies are inferred from the claim text.