Multi-kv-class gallium nitride power devices with hydrogen plasma guard array termination

A Schottky barrier diode comprising:

• a SiC substrate;
• a GaN buffer layer;
• a first unintentionally doped GaN layer;
• an AlN layer;
• an AlGaN layer;
• a second unintentionally doped GaN layer;
• a p-GaN layer, wherein the p-GaN layer is doped with Mg;
• and
• a cathode and an anode, each in direct contact with the first unintentionally doped GaN layer, the AlN layer, the AlGaN layer, the second unintentionally doped GaN layer, and the p-GaN layer, wherein the anode has a length LA along the p-GaN layer, the cathode has a length LC along the p-GaN layer, and the anode and the cathode are separated by a distance LAC along the p-GaN layer,
• wherein an outer surface of the p-GaN layer defines n portions, each portion having a length LTn extending along the p-GaN layer between the cathode and the anode and defining an array Tn of activated p-GaN regions, and each element in array Tn is separated by a passivated p-GaN region.