Fabricating equipment for semiconductor device and method for fabricating semiconductor device

Fabricating equipment for a semiconductor device comprising:

• a process chamber including an internal space;
• a substrate support configured to support a substrate inside the internal space, the substrate having a first film and a second film formed thereon;
• a nozzle on the substrate support and configured to supply a process gas;
• a first heater inside the substrate support and configured to heat the substrate;
• and
• a second heater configured to selectively generate one of waves of a first frequency and waves of a second frequency to differentially heat the first film and the second film when the substrate is supported on the substrate support.

Fabricating equipment for a semiconductor device, comprising:

• a process chamber including an internal space;
• a substrate support disposed in the internal space and configured to support a substrate;
• a nozzle configured to supply a process gas into the internal space;
• a first heater configured to heat the substrate when the substrate is supported on the substrate support;
• and
• a second heater configured to generate waves toward the substrate when the substrate is supported on the substrate support,
• wherein the substrate includes a first layer having a maximum dielectric loss value at a first frequency and a second layer having a maximum dielectric loss value at a second frequency different from the first frequency, and
• wherein the second heater is configured to selectively generate waves of the first frequency or the second frequency to differentially heat the first layer and the second layer, when the substrate is supported on the substrate support, such that a temperature of one of the first layer and the second layer is higher than a temperature of the other.