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US 2026/0155631 A1Published application
Semiconductor layered body, method of manufacturing semiconductor layered body, and optical semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorsTakahiro YASUNAMI, Kenshi TAKADA
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Abstract
A semiconductor layered body according to the present disclosure includes a first semiconductor layer formed of a III-V compound semiconductor, and a p-type InGaAs layer stacked on the first semiconductor layer and containing carbon as an impurity that generates majority carriers. The p-type InGaAs layer has a resistivity of 2.0×10−3 Ωcm or less.
Claims6
A semiconductor layered body comprising:
- a first semiconductor layer formed of a III-V compound semiconductor;
- and
- a p-type InGaAs layer stacked on the first semiconductor layer and containing carbon as an impurity that generates majority carriers,
- wherein the p-type InGaAs layer has a resistivity of 2.0×10−3 Ωcm or less.
1 more element
An optical semiconductor device comprising:
- a semiconductor layered body including a first semiconductor layer formed of a III-V compound semiconductor and a p-type InGaAs layer stacked on the first semiconductor layer, the p-type InGaAs layer containing carbon as an impurity that generates majority carriers, the p-type InGaAs layer having a resistivity of 2.0×10−3 Ωcm or less;
- and
- an electrode disposed in contact with the p-type InGaAs layer of the semiconductor layered body.
A method of manufacturing a semiconductor layered body, the method comprising:
- preparing a substrate formed of a III-V compound semiconductor:
- stacking a semiconductor layer formed of a III-V compound semiconductor on the substrate by epitaxial growth;
- and
- performing heat treatment on the semiconductor layer,
- wherein the stacking the semiconductor layer includes stacking a p-type InGaAs layer containing carbon as an impurity that generates majority carriers by a chemical vapor deposition using an organometallic gas as a raw material for each of indium, gallium, and arsenic,
- wherein, in the stacking the p-type InGaAs layer, the raw material for arsenic is tertiary butyl arsine, and a temperature of the substrate is 500° C. or less, and
- wherein, in the performing the heat treatment on the semiconductor layer, the semiconductor layer is heated at a temperature of 500° C. or less in an inert gas atmosphere.
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Dependencies are inferred from the claim text.