Semiconductor laser modules

A semiconductor laser module comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer, wherein the active layer satisfies that a content ratio of an element Al to an element H satisfies a first preset proportion distribution, a content ratio of an element In to the element H satisfies a second preset proportion distribution, a content ratio of an element Si to the element H satisfies a third preset proportion distribution, a content ratio of an element Mg to the element H satisfies a fourth preset proportion distribution, and a content ratio of an element C to an element O satisfies a fifth preset proportion distribution;

• wherein
• a peak value of a dielectric constant distribution of the upper waveguide layer is greater than or equal to a peak value of a dielectric constant distribution of the lower waveguide layer;
• a peak value of a refractive index coefficient distribution of the upper waveguide layer is greater than or equal to a peak value of a refractive index coefficient distribution of the lower waveguide layer;
• a valley value of the dielectric constant distribution of the upper waveguide layer is less than or equal to a valley value of the dielectric constant distribution of the lower waveguide layer;
• and
• a valley value of the refractive index coefficient distribution of the upper waveguide layer is less than or equal to a valley value of the refractive index coefficient distribution of the lower waveguide layer;
• an eighth preset proportion distribution satisfied by a content ratio of an element In to an element H of the lower waveguide layer corresponds to a curvilinear distribution in a third quadrant of a tenth function, the tenth function being y=sin x/x2;
• a ninth preset proportion distribution satisfied by a content ratio of an element In elements to an element H of the upper waveguide layer corresponds to a curvilinear distribution of an eleventh function, the eleventh function being y=x1/2;
• a tenth preset proportion distribution satisfied by a content ratio of an element Si to the element H of the lower waveguide layer corresponds to a curvilinear distribution of a twelfth function, the twelfth function being y=Inx/ex;
• and
• an eleventh preset proportion distribution satisfied by a content ratio of an element Al to the element H and a twelfth preset proportion distribution satisfied by a content ratio of an element C to an element O of the lower waveguide layer corresponds to a curvilinear distribution of a thirteenth function, respectively, the thirteenth function being a constant function.