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US 2026/0155338 A1Published application
Etching method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsShoi SUZUKI, Aoi KITAGAWA, Taku GOHIRA
Life of this patent
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Abstract
An etching method according to an example embodiment includes (a) supplying a film forming gas into a chamber through a gas feeding port of a showerhead containing silicon to form a protective film on an inner wall of the gas feeding port; and (b) supplying an etching gas into the chamber through the gas feeding port on which the protective film is formed to etch a substrate in the chamber with plasma generated from the etching gas.
Claims19
An etching method comprising:
- supplying a film forming gas into a chamber through a gas feeding port of a showerhead including silicon to form a protective film on an inner wall of the gas feeding port;
- and
- supplying an etching gas into the chamber through the gas feeding port on which the protective film is formed to etch a substrate in the chamber with plasma generated from the etching gas.
A plasma processing apparatus comprising:
- a showerhead including silicon and having a gas feeding port;
- a chamber;
- a substrate support configured to support a substrate in the chamber;
- a gas supply configured to supply a film forming gas and an etching gas into the chamber through the gas feeding port;
- a plasma generator configured to generate plasma from the etching gas in the chamber;
- and
- a circuitry configured to control the plasma processing apparatus to perform an etching method,
- wherein the etching method includes
- supplying the film forming gas into the chamber through the gas feeding port of the showerhead to form a protective film on an inner wall of the gas feeding port, and
- supplying the etching gas into the chamber through the gas feeding port on which the protective film is formed to etch the substrate in the chamber with the plasma generated from the etching gas.
7 more elements
Dependencies are inferred from the claim text.