Method for obtaining measurements of semiconductor structures from a single wedge cut of an inspection volume

A method of obtaining one or more measurements of semiconductor structures in an inspection volume of a sample, the method comprising:

• using a FIB column to mill into an inspection volume to expose a cross-section surface in the inspection volume, the FIB column being arranged at a slant angle relative to a surface of a table supporting the sample;
• imaging the cross-section surface with a charged particle beam imaging system to obtain an image of the cross-section surface;
• determining positions of cross-section features of the semiconductor structures in the image of the cross-section surface;
• determining reference positions of the cross-section features from at least one reference image of the semiconductor structures;
• and
• obtaining the one or more measurements of the semiconductor structures in the inspection volume using lateral displacements between the positions of the cross-section features in the reference positions and the image of the cross-section surface.