Back to results
US 2026/0153754 A1Published application
Iii-nitride-based photonic devices with quantum confinement
AssigneeThe Regents of the University of Michigan
InventorsWalter Shin, Ping Wang, Zetian Mi, Mohammed Soltani
Life of this patent
Estimating the term…
Abstract
A photonic device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes a base layer comprising an aluminum nitride (AlN)-based material, and a multiple quantum well or short-period superlattice structure supported by the base layer. The multiple quantum well or short-period superlattice structure includes a stack of AlN-based quantum well layers and AlN-based barrier layers.
Claims19
A photonic device comprising:
- a substrate;
- and
- a heterostructure supported by the substrate;
- wherein the heterostructure comprises:
- a base layer comprising an aluminum nitride (AlN)-based material;
- and
- a multiple quantum well or short-period superlattice structure supported by the base layer;
- wherein the multiple quantum well or short-period superlattice structure comprises a stack of AlN-based quantum well layers and AlN-based barrier layers.
5 more elements
A photonic device comprising:
- a substrate;
- and
- a heterostructure supported by the substrate;
- wherein the heterostructure comprises:
- a base layer comprising a III-nitride material having a bandgap greater than about 4 eV;
- and
- a multiple quantum well or short-period superlattice structure supported by the base layer;
- wherein the multiple quantum well or short-period superlattice structure comprises a stack of alternating III-nitride quantum well layers and III-nitride barrier layers.
5 more elements
A photonic device comprising:
- a substrate;
- and
- a heterostructure supported by the substrate;
- wherein the heterostructure comprises:
- a base layer comprising a III-nitride material;
- and
- a multiple quantum well or short-period superlattice structure supported by the base layer;
- wherein the multiple quantum well or short-period superlattice structure comprises a stack of alternating III-nitride quantum well layers and III-nitride barrier layers;
- and
- wherein the III-nitride material of the base layer and the III-nitride quantum well layers are lattice mismatched.
7 more elements
Dependencies are inferred from the claim text.