Sintered body, sputtering target, oxide thin film, thin film transistor and method of manufacturing sintered body
AssigneeH & Iruja Co., Ltd.
InventorsHYUNG ROK LEE, YU LIN OH, SUNG KWAN LIM, SANG WON SHIN
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Abstract
A sintered body includes indium (In), tin (Sn), gallium (Ga), zinc (Zn), and oxygen (O). The content of In atoms is 45 to 65 at % based on the total content of the In, Sn, Zn, and Ga atoms, and the content of Ga atoms is greater than 0 at % and 30 at % or less based on the total content of the In, Sn, Zn, and Ga atoms. The sintered body includes In, Sn, Ga, Zn and O and can improve non-uniformity caused by particles, arcing, and the like due to excessive oxygen injection during large-area deposition when forming an oxide thin film using a sputtering target manufactured from the sintered body.
Claims11
A sintered body comprising:
- indium (In);
- tin (Sn);
- gallium (Ga);
- zinc (Zn);
- and
- oxygen (O),
- wherein the content of In atoms is 45 to 65 at % based on the total content of the In, Sn, Zn, and Ga atoms, and
- the content of Ga atoms is 10 to 30 at % based on the total content of the In, Sn, Zn, and Ga atoms.
A thin film transistor comprising:
- a channel layer;
- a gate electrode disposed to overlap the channel layer;
- and
- a source electrode and a drain electrode each connected to the channel layer,
- wherein the channel layer includes indium (In), tin (Sn), gallium (Ga), zinc (Zn), and oxygen (O),
- the content of In atoms in the channel layer is 45 to 65 at % based on the total content of the In, Sn, Zn, and Ga atoms, and
- the content of Ga atoms in the channel layer is 10 to 30 at % based on the total content of the In, Sn, Zn, and Ga atoms.
A method of manufacturing a sintered body including indium (In), tin (Sn), gallium (Ga), zinc (Zn), and oxygen (O), the method comprising:
- obtaining a powder mixture by mixing In2O3 powder, SnO2 powder, Ga2O3 powder, and ZnO powder;
- and
- sintering the powder mixture to obtain a sintered body,
- wherein, in the sintered body, the content of In atoms is 45 to 65 at % based on the total content of the In, Sn, Zn, and Ga atoms;
- and
- the content of Ga atoms is 10 to 30 at % based on the total content of the In, Sn, Zn, and Ga atoms.
Dependencies are inferred from the claim text.