Mems device with compensation of the mechanical stress and related manufacturing process
AssigneeSTMicroelectronics International N.V.
InventorsSilvia NICOLI, Igor VARISCO, Filippo DANIELE, Lorenzo TENTORI, Filippo D'ERCOLI, Federica CAPRA
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Abstract
A micro-electro-mechanical (MEMS) device is provided that includes a fixed body delimiting a cavity; a suspended structure extending cantilevered from the fixed body, above the cavity, and including a suspended semiconductive region; and a transducer arranged above the suspended structure. The suspended structure further includes a compensation region of thermal oxide, which extends below the suspended semiconductive region. A method of manufacturing a MEMS device is also provided.
Claims20
A MEMS device, comprising:
- a fixed body delimiting a cavity;
- a suspended structure extending cantilevered from the fixed body, above the cavity, and comprising a suspended semiconductive region;
- and
- a transducer above the suspended structure,
- and wherein the suspended structure further comprises a compensation region of thermal oxide, which extends below the suspended semiconductive region.
A process for manufacturing a MEMS device, comprising:
- forming a fixed body delimiting a cavity;
- forming a suspended structure extending cantilevered from the fixed body, above the cavity, and comprising a suspended semiconductive region;
- and
- forming a transducer above the suspended structure,
- and wherein forming the suspended structure comprises forming a compensation region of thermal oxide, which extends below the suspended semiconductive region.
A device, comprising:
- a structure having a first surface and a second surface opposite the first surface;
- a first substrate on the first surface of the structure and a second substrate on the second surface of the structure;
- an insulating layer between the first substrate and the second substrate, the insulating layer coupling the first and second substrate together;
- a cavity in the structure delimited upwardly by a first portion of the first substrate;
- a suspended structured extending cantilevered from the structure and comprising a suspended semiconductive region;
- and
- a transducer on the suspended structure above the cavity.
Dependencies are inferred from the claim text.