Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a die pad;
• a first semiconductor chip mounted on the die pad;
• a first lead terminal arranged away from the die pad;
• a conductive material arranged between the first semiconductor chip and the die pad;
• and
• a first bonding member having conductivity,
• wherein the first semiconductor chip has a sense transistor, a power transistor, and a first source electrode electrically connected to a source region of the power transistor,
• wherein the first source electrode is electrically connected to the first lead terminal via the first bonding member,
• wherein the first source electrode includes:
• a detection point for detecting a value of a current flowing in the power transistor;
• and
• a first bonding portion to which the first bonding member is bonded,
• wherein, in transparent plan view, the die pad has:
• a first region overlapping with the first semiconductor chip;
• and
• a second region overlapping with the first semiconductor chip and different from the first region,
• wherein, in transparent plan view, the sense transistor, the detection point, and the first bonding portion do not overlap with the first region, but overlap with the second region, and
• wherein, in cross-sectional view, a thickness of the conductive material provided in the second region is larger than a thickness of the conductive material provided in the first region.