Semicondcutor device and semicondcutor module arrangement
AssigneeInfineon Technologies AG
InventorsChristian MÜLLER, Daniel DOMES
Life of this patent
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Abstract
A semiconductor device may comprise an insulator substrate, a second substrate, a first structured metallization layer comprising a first section configured to operate at a first potential, and a second section configured to operate at a second potential. The insulator substrate may comprise a second structured metallization layer which may comprise a first section coupled to the first potential and a second section coupled to the second potential. At least one routable third structured metallization layer may comprise a first segment coupled to the second potential and a second segment coupled to the first potential.
Claims20
A semiconductor device, comprising:
- an insulator substrate;
- a second substrate arranged at a first surface of the insulator substrate;
- and
- a first structured metallization layer arranged at a second surface of the insulator substrate opposite the first surface,
- the first structured metallization layer comprising:
- a first section configured to operate at a first potential;
- and
- a second section configured to operate at a second potential;
- the insulator substrate comprising:
- a second structured metallization layer buried in the insulator substrate, configured for electromagnetic interference (EMI) shielding, arranged adjacent to the second substrate, comprising:
- a first section coupled to the first potential;
- and
- a second section coupled to the second potential, wherein the first section and the second section are non-overlapping;
- and
- at least one routable third structured metallization layer, comprising:
- a first segment coupled to the second potential;
- and
- a second segment coupled to the first potential,
- wherein the first section of the second structured metallization layer forms a first snubber capacitance with the first segment of the third structured metallization layer.
A semiconductor module arrangement comprising:
- an insulator substrate;
- and
- a second conductive substrate attached to the insulator substrate,
- the insulator substrate comprising:
- at least one electromagnetic interference (EMI) shielding layer;
- and
- an intermeshing layered structure configured to function as a stacked snubber capacitance.
A semiconductor device, comprising:
- an insulator substrate;
- a second substrate arranged at a first surface of the insulator substrate;
- and
- a first structured metallization layer arranged at a second surface of the insulator substrate opposite the first surface,
- the first structured metallization layer comprising:
- a first section configured to operate at a first potential;
- and
- a second section configured to operate at a second potential;
- the insulator substrate comprising:
- a second structured metallization layer arranged adjacent to the second substrate, comprising:
- a first section coupled to the first potential;
- and
- a second section coupled to the second potential;
- and
- at least one routable third structured metallization layer, comprising:
- a first segment coupled to the second potential;
- and
- a second segment coupled to the first potential,
- wherein the first section of the second structured metallization layer forms a first snubber capacitance with the first segment of the third structured metallization layer.
Dependencies are inferred from the claim text.