Optoelectronic Device and the Fabrication Thereof

A deep ultraviolet light emitting device comprising:

• a p-type contact;
• a heterostructure located on the p-type contact, the heterostructure including a p-type semiconductor layer, an n-type semiconductor layer, and an active region located between the p-type semiconductor layer and the n-type semiconductor layer, wherein the active region is configured to emit deep ultraviolet radiation;
• at least one n-type contact located on a surface of the heterostructure;
• and
• a plurality of three-dimensional nanostructures located on the surface of the heterostructure, wherein at least one of:
• a density, a size, or a shape of the three-dimensional nanostructures is substantially uniform across the surface of the heterostructure.

A method of fabricating an optoelectronic device, the method comprising:

• removing a growth substrate from a wafer, the wafer comprising a heterostructure located on the growth substrate, the heterostructure including:
• a buffer layer located on the growth substrate, an n-type semiconductor layer located on the buffer layer, a p-type semiconductor layer located on the n-type semiconductor layer, and an active region located between the n-type semiconductor layer and the p-type semiconductor layer;
• and
• forming a plurality of three-dimensional nanostructures on a surface of the heterostructure exposed by removal of the growth substrate, wherein at least one of:
• a density, a size, or a shape of the three-dimensional nanostructures is substantially uniform across the surface of the heterostructure.