Manufacturing method of gate oxide layer
AssigneeProAsia Semiconductor Corporation
InventorWen-Chang Hsu
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Abstract
A manufacturing method of a gate oxide layer is provided. The manufacturing method comprises the following steps. First, a silicon-containing substrate is provided. Next, a first oxygen plasma deposition is applied to form a first silicon dioxide (SiO2) layer covering the silicon-containing substrate. Then, a second oxygen plasma deposition is applied to form a second silicon dioxide (SiO2) layer over the first silicon dioxide layer. Finally, a third oxygen plasma is applied to bombard the second silicon dioxide layer.
Claims11
A manufacturing method of a gate oxide layer, comprising:
- providing a silicon-containing substrate;
- providing a first oxygen plasma deposition to form a first silicon dioxide layer covering the silicon-containing substrate;
- providing a second oxygen plasma deposition to form a second silicon dioxide layer over the first silicon dioxide layer;
- and
- providing a third oxygen plasma to bombard the second silicon dioxide layer.
A manufacturing method of a gate oxide layer, comprising:
- providing a silicon carbide substrate;
- providing a multi-stage plasma enhanced atomic layer deposition (PEALD) to form a first silicon dioxide layer covering the silicon carbide substrate and sequentially to form a second silicon dioxide layer covering the first silicon dioxide layer;
- and
- providing an oxygen plasma to bombard the second silicon dioxide layer.
Dependencies are inferred from the claim text.