Plasma processing apparatus and temperature controlling method

A plasma processing apparatus comprising:

• a plasma processing chamber;
• a base disposed in the plasma processing chamber;
• an electrostatic chuck disposed on an upper portion of the base, the electrostatic chuck including a first part and a second part;
• at least one first series circuit including a first heater electrode layer disposed in the first part and a first switch connected in series with the first heater electrode layer;
• a first power supply line electrically connected to the first series circuit;
• at least one second series circuit including a second heater electrode layer disposed in the second part and a second switch connected in series with the second heater electrode layer;
• a second power supply line electrically connected to the second series circuit;
• a main power-supply line electrically connected to the first power supply line and the second power supply line;
• at least one RF filter electrically connected to the main power-supply line;
• a power source electrically connected to the main power-supply line;
• and
• a control circuit configured to:
• perform periodic ON/OFF control on the first switch and the second switch by assigning, to the first heater electrode layer and the second heater electrode layer, respective possible time intervals for power supply that do not overlap with each other within a single period, such that a total of current values flowing through the first power supply line and the second power supply line is below a rated value of the power source.