Method and apparatus for electron beam exposure

An apparatus for electron beam exposure, comprising:

• a memory storing computer-readable instructions, and
• a processor, wherein the computer-readable instructions when executed by the processor configure the apparatus to:
• determine one or more to-be-transferred patterns;
• establish a reference grid, wherein a size of each grid cell in the reference grid is determined based on a size of each of the one or more to-be-transferred patterns, each of the one or more to-be-transferred patterns is aligned with a center of a respective grid cell in the reference grid, and the size of each grid cell is equal to a unit size of write fields of the electron beam exposure;
• determine a position of a reference rectangle, wherein a relative position is fixed between the reference rectangle and the reference grid;
• and
• delimit the write fields of the electron beam exposure based on the reference rectangle and the relative position to align each of the one or more to-be-transferred patterns at a center of a respective write field of the write fields, where a size of each of the write fields is equal to the unit size.

A non-transitory computer-readable storage medium, storing computer-readable instructions, wherein the computer-readable instructions when executed by a processor configured a device to:

• determine one or more to-be-transferred patterns;
• establish a reference grid, wherein a size of each grid cell in the reference grid is determined based on a size of each of the one or more to-be-transferred patterns, each of the one or more to-be-transferred patterns is aligned with a center of a respective grid cell in the reference grid, and the size of each grid cell is equal to a unit size of write fields of the electron beam exposure;
• determine a position of a reference rectangle, wherein a relative position is fixed between the reference rectangle and the reference grid;
• and
• delimit the write fields of the electron beam exposure based on the reference rectangle and the relative position to align each of the one or more to-be-transferred patterns at a center of a respective write field of the write fields, where a size of each of the write fields is equal to the unit size.