Current offset detection amplifier circuit for puf based on magnetoresistive random-access memory, and puf device having the same

A PUF device comprising:

• a cell array including a plurality of cells defined by a plurality of word lines, a plurality of bit lines, and a plurality of source lines, the cells being configured based on resistive memory elements;
• a word line driver configured to select and activate at least one of the plurality of word lines;
• a bit line selector configured to select two bit lines as a pair from among the plurality of bit lines;
• a detection circuit configured to, when two cells storing the same data are selected by the activated word line and the selected bit line pair, detect and store a voltage difference corresponding to currents flowing through the two selected cells via the selected bit line pair during a precharge phase, and to output a pair of detection signals having an amplified voltage difference according to currents flowing through a bit line pair cross-connected with the stored voltage difference during an amplification phase following the precharge phase;
• and
• a detection amplifier circuit configured to store voltage levels corresponding to the pair of detection signals output from the detection circuit during the precharge phase, and to detect and amplify voltage variations of the pair of detection signals in a coupling manner during the amplification phase, thereby outputting a pair of response signals.