Process modules configured for performing concurrent epitaxial deposition of material layers and semiconductor processing systems including such process modules

A semiconductor processing system comprising:

• a wafer transfer module comprising a facet having a first lateral aperture and a second lateral aperture;
• a gate valve assembly coupled with the wafer transfer module, the gate valve assembly comprising a first substrate pass through and a second substrate pass through;
• and
• a process module coupled to the gate valve assembly, the process module comprising:
• a common chamber housing;
• a first chamber body disposed in the common chamber housing, the first chamber body comprising a first ceramic weldment having a first chamber exterior comprising a plurality of first external ribs extending laterally about the first chamber exterior, and a first chamber interior enclosing a first process volume;
• a second chamber body disposed in the common chamber housing, the second chamber body comprising a second ceramic weldment having a second chamber exterior comprising a plurality of second external ribs extending laterally about the second chamber exterior, and a second chamber interior enclosing a second process volume;
• wherein the first chamber body and the second chamber body both have an upper wall and a lower wall, the upper wall extending longitudinally between an injection chamber flange and a longitudinally opposite exhaust chamber flange, the lower wall being below and parallel relative to the upper wall, and
• wherein the first chamber body and the second chamber body are laterally separated by a lateral separation distance and positioned adjacent to one another on either side of a central plane.