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US 2026/0146323 A1Published application
Ion traps with slanted holes in substrate processing systems
AssigneeASM IP Holding B.V.
InventorTommi Tynell
Life of this patent
Estimating the term…
Abstract
Ion traps for use in substrate processing systems are disclosed. The ion traps may comprise at least one hole. The hole may comprise an interior surface that is slanted relative to a top surface or a bottom surface of the ion trap. The hole may prevent plasma ions from passing through the ion trap and/or allow plasma radicals to pass through the ion trap.
Claims20
A reaction chamber, comprising:
- a susceptor configured to support a substrate;
- a precursor distribution system positioned above the susceptor and configured to provide one or more precursors into the reaction chamber;
- a radio frequency (RF) power source configured to supply RF power for generating, in the reaction chamber, ions and radicals from the one or more precursors;
- and
- an ion trap positioned between the susceptor and the precursor distribution system and comprising at least one hole, wherein the at least one hole comprises an interior surface that is:
- slanted relative to a top surface or a bottom surface of the ion trap, and
- configured to prevent the ions from passing through the ion trap and contacting the substrate.
4 more elements
An ion trap of a reaction chamber comprising:
- a plurality of holes,
- wherein an interior surface, of each of the plurality of holes, is slanted relative to a top surface or a bottom surface of the ion trap;
- and
- wherein the plurality of holes are configured to block ions from passing through the ion trap and allow radicals to pass through the ion trap.
1 more element
An ion trap of a reaction chamber comprising:
- a hole comprising a spiral shape,
- wherein an interior surface of the hole is slanted relative to a top surface or a bottom surface of the ion trap;
- and
- wherein the hole is configured to block ions from passing through the ion trap and allow radicals to pass through the ion trap.
1 more element
Dependencies are inferred from the claim text.