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US 2026/0146211 A1Published application
Post-chemical mechanical polishing cleaning composition, method for post-chemical mechanical polishing cleaning treatment, and method for producing semiconductor substrate
OwnerEmi Naritainventor
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Abstract
Provided is means that enables removing residues remaining on the surface of a polished object containing silicon-containing material sufficiently. A post-chemical mechanical polishing cleaning composition, containing a sulfonic acid group-containing anionic polymer and a nitrogen-containing nonionic polymer having a weight-average molecular weight of 2,000 or more and 20,000 or less.
Claims9
A post-chemical mechanical polishing cleaning composition, comprising:
- a sulfonic acid group-containing anionic polymer;
- and a nitrogen-containing nonionic polymer having a weight-average molecular weight of 2,000 or more and 20,000 or less.
Dependencies are inferred from the claim text.