Method for processing semiconductor substrate, method for manufacturing semiconductor device, and processing solution for semiconductor device

Abstract

Provided are a method for processing a semiconductor substrate, a method for manufacturing a semiconductor device, and a processing solution for a semiconductor device usable therefor, in which: a processing step of processing a semiconductor substrate including a layer containing a metal nitride with a processing solution for a semiconductor device is included; the processing solution for a semiconductor device contains NH3, a corrosion inhibitor, and water; the corrosion inhibitor is at least one selected from the group consisting of 5-methyl-1H-benzotriazole, imidazole, and 5-amino-1H-tetrazole; and a mass ratio of a content of NH3 to a content of the corrosion inhibitor (NH3/corrosion inhibitor) is 5 to 60.

Dependencies are inferred from the claim text.