Three-dimensional integration of processing chiplet and static random-access memory (SRAM) chiplets

A method for producing an electronic device, the method comprising:

• disposing one or more first SRAM chiplets on a first side of a processing chiplet;
• disposing one or more second SRAM chiplets on a second side of the processing chiplet;
• positioning at least a first circuit board substrate with a first surface oriented parallel to an outer surface of at least one of the first or second SRAM chiplets;
• and
• positioning at least a second circuit board substrate with a second surface oriented orthogonal to at least one of the first and second sides of the processing chiplet and forming electrical connections between the at least a second circuit board substrate and at least one of the first and second SRAM chiplets.

An electronic device, comprising:

• processing means for processing data, the processing means having a first side and a second side;
• first memory means disposed on the first side of the processing means for storing a first portion of the data;
• second memory means disposed on the second side of the processing means for storing a second portion of the data;
• first substrate having a first surface oriented parallel to an outer surface of at least one of the first or second memory means;
• and
• second substrate having a second surface oriented orthogonal to at least one of the first and second sides of the processing means and electrically connected to at least one of the first and second memory means.