Back to results
US 2026/0143870 A1Published application
Micro optoelectronic device
AssigneeVueReal Inc.
InventorsGholamreza CHAJI, Ehsanollah FATHI, Hossein Zamani SIBONI
Life of this patent
Estimating the term…
Abstract
The present invention discloses a different option electronic devices with their structure so layers that include doping, function, ohmic, conductive, planarization and passivation layer. The invention also discloses configuration of connections of top and bottom sides comprising isolated structures, related electrodes and height configuration of isolated structures.
Claims1
A method of fabricating an optoelectronic device, the method comprising:
- etching doped layers, blocking layers, and a functional layer to form isolated structures comprising ohmic layers;
- depositing dielectric layers to cover at least sidewalls of the isolated structures;
- forming conductive layers on exposed portions of the isolated structures;
- and
- forming passivation layers over the device to fill a surface thereof.
2 more elements
Dependencies are inferred from the claim text.