Photoelectric conversion device, receiving sensor and lidar
AssigneeSuteng Innovation Technology Co., Ltd.
InventorsEnfei CHAO, Guofeng YAO, Chunqiu XIA
Life of this patent
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Abstract
A photoelectric conversion device, a fabrication method, and an image sensor are disclosed. The device includes a substrate with at least two avalanche diode units. Each unit has a device region surrounded by a back-side deep trench isolation structure. At least one front-side trench isolation structure is disposed between any two adjacent units. A doped region, formed by outward diffusion from the front-side trench isolation structure, has a gradually decreasing doping concentration gradient. At least a portion of the doped region extends beyond the back-side deep trench isolation structure to form a dark current suppression region within each adjacent avalanche diode unit.
Claims12
A photoelectric conversion device, comprising:
- a substrate;
- a front-side trench isolation structure;
- at least two avalanche diode units formed in the substrate, each of the avalanche diode units comprising:
- a device region and a back-side deep trench isolation structure surrounding the device region;
- and
- a doped region formed by outward diffusion from the front-side trench isolation structure, the doped region having a doping concentration gradient that gradually decreases outward from the front-side trench isolation structure,
- wherein, between any two adjacent avalanche diode units, there is at least one front-side trench isolation structure;
- and
- wherein at least a portion of the doped region extends beyond the back-side deep trench isolation structure, forming a dark current suppression region in both of the two adjacent avalanche diode units.
A receiving sensor, comprising:
- a photoelectric conversion device;
- an analog front-end circuit configured to convert analog electrical signals generated by the photoelectric conversion device into digital signals;
- a digital processor configured to process the digital signals,
- wherein the photoelectric conversion device comprises:
- a substrate;
- a front-side trench isolation structure;
- at least two avalanche diode units formed in the substrate, each of the avalanche diode units comprising:
- a device region and a back-side deep trench isolation structure surrounding the device region;
- and
- a doped region formed by outward diffusion from the front-side trench isolation structure, the doped region having a doping concentration gradient that gradually decreases outward from the front-side trench isolation structure,
- wherein, between any two adjacent avalanche diode units, there is at least one front-side trench isolation structure;
- and
- wherein at least a portion of the doped region extends beyond the back-side deep trench isolation structure, forming a dark current suppression region in both of the two adjacent avalanche diode units.
Dependencies are inferred from the claim text.