Semiconductor device and associated manufacturing method

A semiconductor device comprising:

• a substrate;
• a plurality of gate stacks situated horizontally following one another on the substrate, each gate stack comprising a layer of a dielectric material in contact with the substrate and a layer of a conductive material on the layer of dielectric material;
• a source and a drain situated on the substrate on either side of the plurality of gate stacks;
• a plurality of first spacers made of a first dielectric material, forming secondary spacers having a first width identical for all the secondary spacers, called width of the secondary spacers, the source and the drain being separated from the closest gate stack by a unique secondary spacer;
• at least one main spacer made of a second dielectric material, two secondary spacers and a main spacer intercalated between the two secondary spacers being situated between each gate stack;
• the width of the main spacer(s) being greater than the width of the secondary spacers.