Wafer-level-packaged silicon-piezoelectric resonator
AssigneeUniversity of Florida Research Foundation, Inc.
InventorRoozbeh Tabrizian
Life of this patent
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Abstract
A method for manufacturing a micro-electro-mechanical systems (MEMS) platform is provided. The method includes depositing a piezoelectric layer on a first device layer of a first cavity-embedded silicon-on-insulator (SOI) substrate, wherein the first device layer is N-type doped and comprises a first thickness, polarizing the piezoelectric layer according to a desired pattern, bonding a second device layer comprising a second thickness to the piezoelectric layer, wherein the second device layer is N-type doped, and defining a resonator lateral geometry by forming trenches through the second device layer, the piezoelectric layer, and the first device layer.
Claims20
A method for manufacturing a micro-electro-mechanical systems (MEMS) platform, comprising:
- depositing a piezoelectric layer on a first device layer of a first cavity-embedded silicon-on-insulator (SOI) substrate, wherein the first device layer is N-type doped and comprises a first thickness;
- polarizing the piezoelectric layer according to a desired pattern;
- bonding a second device layer comprising a second thickness to the piezoelectric layer, wherein the second device layer is N-type doped;
- and
- defining a resonator lateral geometry by forming trenches through the second device layer, the piezoelectric layer, and the first device layer.
A micro-electro-mechanical systems (MEMS) platform, comprising:
- a first cavity-embedded silicon-on-insulator (SOI) substrate comprising a first device layer that is N-type doped and having a first thickness;
- a piezoelectric layer deposited on the first device layer, wherein the piezoelectric layer is polarized according to a pattern;
- a second device layer bonded to the piezoelectric layer, wherein the second device layer is N-type doped and has a second thickness;
- and
- trenches formed through the second device layer, the piezoelectric layer, and the first device layer, wherein the trenches define a resonator lateral geometry.
Dependencies are inferred from the claim text.