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US 2026/0142640 A1Published application
Mems resonator with temperature compensation
AssigneeTexas Instruments Incorporated
InventorsUdit RAWAT, Bichoy BAHR
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Abstract
An apparatus comprising: a microelectromechanical system (MEMS) resonator; and a metal stack over the MEMS resonator, the metal stack including a first metal layer, a second metal layer, and first and second metal vias coupled between the first and second metal layers, at least one of the first or second metal layers overlapping at least part of the MEMS resonator. some of the ferroelectric capacitors.
Claims21
An apparatus comprising:
- a microelectromechanical system (MEMS) resonator;
- and
- a metal stack over the MEMS resonator, the metal stack including a first metal layer, a second metal layer, and first and second metal vias coupled between the first and second metal layers, at least one of the first or second metal layers overlapping at least part of the MEMS resonator. some of the ferroelectric capacitors.
An apparatus comprising:
- ferroelectric capacitors including:
- a first ferroelectric capacitor, the first ferroelectric capacitor including a top plate;
- a second ferroelectric capacitor, the second ferroelectric capacitor including a top plate;
- and
- a stack of metal interconnects over the first ferroelectric capacitor and the second ferroelectric capacitor, the stack of metal interconnects including a first metal layer, a second metal layer, and first and second metal vias coupled between the first and second metal layers, at least one of the first or second metal layers overlapping the first and second ferroelectric capacitors.
2 more elements
An apparatus comprising:
- a substrate;
- a first ferroelectric capacitor, including:
- a first top plate;
- and
- a first bottom plate;
- a second ferroelectric capacitor, including:
- a second bottom plate;
- and
- a second top plate;
- and
- a metal stack over the first top plate of the first ferroelectric capacitor and over the second top plate of the second ferroelectric capacitor, the metal stack including a first metal layer, a second metal layer, and first and second metal vias coupled between the first and second metal layers, at least one of the first or second metal layers overlapping the ferroelectric capacitors.
8 more elements
Dependencies are inferred from the claim text.