Clock delay compensation circuit and memory device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsCheolmin Ahn, Jaewoo Lee, Kihan Kim, Daesik Moon
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AssigneeSamsung Electronics Co., Ltd.
InventorsCheolmin Ahn, Jaewoo Lee, Kihan Kim, Daesik Moon
Estimating the term…
A memory device includes a memory cell array including a plurality of memory cells, a memory peripheral portion controlling the memory cell array, and an interface including a system clock signal receiver, a data clock signal receiver, a data signal receiver, and a clock delay compensation circuit. The clock delay compensation circuit includes a clock driver including a plurality of cross-coupled latches and a four-phase clock generating circuit. The clock driver generates a second differential clock signal pair using a first differential clock signal pair., The four-phase clock generates a plurality of phase clock signals using the second differential clock signal pair. At least one of the plurality of cross-coupled latches receives an external power supply voltage.
A clock delay compensation circuit comprising:
A clock delay compensation circuit comprising:
A memory device comprising:
Dependencies are inferred from the claim text.