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US 2026/0140439 A1Published application
Method of manufacturing semiconductor device
AssigneeFUJIFILM Corporation
InventorsTetsuya SHIMIZU, Tsukasa YAMANAKA, Yukhisa KAWADA
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Abstract
A container for storing a chemical fluid for manufacturing an electronic material, in which after an inspection solution charges the container and stored at 25° C. for 30 days, a sum of a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the inspection solution is 100 ppt or less.
Claims12
A method of manufacturing a semiconductor device comprising:
- (1) forming an actinic ray-sensitive or radiation-sensitive film with an actinic ray-sensitive or radiation-sensitive resin composition containing a solvent;
- (2) exposing the actinic ray-sensitive or radiation-sensitive film;
- and
- (4) developing the exposed actinic ray-sensitive or radiation-sensitive film by using a developer,
- wherein at least one of the actinic ray-sensitive or radiation-sensitive resin composition of (1) or the developer of (4) is a chemical fluid for manufacturing an electronic material obtained by a method of manufacturing a chemical fluid for manufacturing an electronic material,
- wherein the method of manufacturing the chemical fluid for manufacturing the electronic material comprises:
- selecting a method of reducing particulate metal in the chemical fluid according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the chemical fluid;
- and
- reducing at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom by using the selected reducing method.
6 more elements
A method of manufacturing a semiconductor device comprising:
- (1) forming an actinic ray-sensitive or radiation-sensitive film with an actinic ray-sensitive or radiation-sensitive resin composition containing a solvent;
- (2) exposing the actinic ray-sensitive or radiation-sensitive film;
- (4) developing the exposed actinic ray-sensitive or radiation-sensitive film by using a developer;
- and
- (5) washing the developed actinic ray-sensitive or radiation-sensitive film by using a rinsing solution,
- wherein at least one of the actinic ray-sensitive or radiation-sensitive resin composition of (1), the developer of (4), or the rinsing solution of (5) is a chemical fluid for manufacturing an electronic material obtained by a method of manufacturing a chemical fluid for manufacturing an electronic material,
- wherein the method of manufacturing the chemical fluid for manufacturing the electronic material comprises:
- selecting a method of reducing particulate metal in the chemical fluid according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the chemical fluid;
- and
- reducing at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom by using the selected reducing method.
7 more elements
Dependencies are inferred from the claim text.