Semiconductor x-ray detector with light emitting layer and fiber optic plate
OwnerMartin KRENKEL, Xiaochao XUinventors
Life of this patent
Estimating the term…
Abstract
An X-ray detector comprising a semiconductor detector layer coupled with a light-emitting diode (LED) layer on the optical side. The detector features an X-ray-side electrode layer deposited on one side of the semiconductor detector layer and an optical-side electrode layer, such as transparent Indium Tin Oxide (ITO), on the opposite side. The semiconductor detector layer is composed of a high atomic number (Z) material with high density and electrical resistivity (around or larger than 10<sup>6</sup>Q·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to guide the light generated in the LED layer to an optical detector.
Claims15
An X-ray detector comprising:
- a semiconductor detector layer configured to absorb X-ray radiation and generate charge carriers in response thereto, the semiconductor detector layer having an X-ray side and an optical side;
- an X-ray-side electrode layer disposed on the X-ray side of the semiconductor detector layer;
- a light-emitting diode (LED) layer disposed on the optical side of the semiconductor detector layer, the LED layer configured to receive charge carriers from the semiconductor detector layer and emit light;
- an optical-side electrode layer disposed on the LED layer opposite the semiconductor detector layer, the optical-side electrode layer comprising a transparent conductive material;
- a fiber-optic faceplate (FOP) optically coupled to the optical-side electrode layer, the FOP configured to guide emitted light while preserving spatial resolution;
- and
- a spatially resolved sensor positioned to receive light guided by the FOP and generate an image corresponding to the X-ray radiation distribution.
A method of detecting X-ray radiation, comprising:
- absorbing X-ray photons in a semiconductor detector layer to generate charge carriers;
- applying an electric field across the semiconductor detector layer using an X-ray-side electrode layer and an optical-side electrode layer;
- transporting at least one type of charge carrier to a light-emitting diode (LED) layer disposed on the optical side of the semiconductor detector layer;
- injecting the charge carriers into the LED layer to cause radiative recombination and emit light;
- guiding the emitted light through a fiber-optic faceplate (FOP) to a spatially resolved sensor;
- and
- detecting the guided light with the spatially resolved sensor to generate an image corresponding to the X-ray radiation distribution.
Dependencies are inferred from the claim text.