Method for evaluating silicon single crystal ingot

Abstract

A method for evaluating a silicon single-crystal ingot is provided that reduces the time required to evaluate the resistivity variation in the crystal length direction and improves wafer yield. In the method for evaluating a silicon single-crystal ingot according to the present embodiment, a counter doping is performed by adding a sub-dopant during the pulling of silicon single-crystals ingot by the CZ method, resistivity on a side surface in a crystal length direction is measured by a four-point probe method in a silicon single-crystal ingot 1 state after the silicon single-crystal ingot is pulled up, and a reject range is determined on the basis of a resistivity distribution in the crystal length direction.

Dependencies are inferred from the claim text.