System and method to retard h2s reaction with a target sensing element
AssigneeHalliburton Energy Services, Inc.
InventorsChristopher Michael Jones, James Martin Price
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Abstract
Disclosed herein are methods and systems for fluid analysis and, more particularly, for identifying and measuring the concentration of H2S in real-time downhole during the fluid analysis. The methods may include conveying a fluid sampling tool into a wellbore, drawing a formation fluid from a sampling zone, and passing the fluid sample over a H2S gas diffusion barrier that controls H2S diffusion from the fluid sample to a thin film deposited on a measurement region, wherein the measurement region is part of the at least one passageway, and analyzing the fluid sample in the fluid sampling tool for a target analyte.
Claims20
A method comprising:
- conveying a fluid sampling tool into a wellbore wherein the fluid sampling tool comprises:
- at least one probe to fluidly connect the fluid sampling tool to a formation in the wellbore;
- and
- at least one passageway that passes through the at least one probe and into the fluid sampling tool;
- drawing a formation fluid from a first sampling zone, as a fluid sample, through the at least one probe and through the at least one passageway;
- passing the fluid sample over a hydrogen sulfide (H2S) gas diffusion barrier that controls diffusion of a H2S from the fluid sample to a thin film deposited on a measurement region, wherein the measurement region is part of the at least one passageway;
- and
- analyzing the fluid sample in the fluid sampling tool for a target analyte.
A system comprising a fluid sampling tool comprising:
- at least one probe to fluidly connect the fluid sampling tool to a formation in a wellbore;
- at least one passageway that passes through the at least one probe and into the fluid sampling tool;
- a sensor section comprising a measurement region in fluid communication with the at least one passageway;
- and
- a thin film deposited on the measurement region, wherein the thin film changes at least one of its physical properties upon exposure to a hydrogen sulfide (H2S) found in the at least one passageway and wherein the thin film is covered at least partially by a H2S gas diffusion barrier.
Dependencies are inferred from the claim text.