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US 2026/0139362 A1Published application
Cobalt-niobium alloy sputtering target assembly and method of making
AssigneeHoneywell International Inc.
InventorsXiaodan Wu, Susan D. Strothers, Rashmi Mohanty, Alicia Im
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Abstract
A method of making a cobalt-niobium sputtering target is provided in which the sputtering target includes 0.5 atomic percent to 25 atomic percent niobium. A sputtering target assembly and a method of making a sputtering target assembly are also provided.
Claims20
A method of making a cobalt-niobium sputtering target, the method comprising:
- combining cobalt metal powder and niobium metal powder to form a powder mixture containing 0.5 atomic percent (at. %) niobium to 25 at. % niobium and the remainder cobalt and impurities;
- and
- vacuum hot pressing the powder mixture at about 800° C. to about 1250° C. at a hydraulic pressure of about 2 ksi (13.8 MPa) to about 5 ksi (34.5 MPa) and for a hold time of about 2 hours to about 5 hours to form a cobalt-niobium sputtering target having a density of at least 95%.
A sputtering target assembly comprising:
- a powder metallurgy high purity cobalt-niobium alloy sputtering target having a density of at least 95%;
- a copper alloy backing plate diffusion bonded to the sputtering target;
- and
- an interlayer positioned between the sputtering target and the backing plate, the interlayer comprising:
- an optional first layer directly adjacent to the sputtering target and consisting of copper;
- a second layer directly adjacent to the first layer if the first layer is present or directly adjacent to the sputtering target if the first layer is not present, wherein the second layer consists of copper;
- and
- a third layer directly adjacent to the second layer on a first side and the backing plate on an opposite side, wherein the third layer consists of copper.
5 more elements
A method of forming a sputtering target assembly, the method comprising:
- diffusion bonding a sputtering target to a second copper layer at a high bond temperature to form an intermediate plated sputtering target, the sputtering target consisting of 0.5 atomic percent (at. %) niobium to 25 at. % niobium and the remainder cobalt and impurities;
- positioning a first side of a third copper layer immediately adjacent to a backing plate and a side opposite the first side of the third copper layer immediately adjacent to the second layer to form an assembly;
- and
- diffusion bonding the assembly at a low bond temperature to form a sputtering target assembly.
1 more element
Dependencies are inferred from the claim text.