Bumpstop process for a motion sensor

Abstract

A method includes etching a portion of an oxide layer of a substrate to form a step shape on the oxide layer. The step shape is associated with a location of a bumpstop. The substrate comprises the oxide layer and a passivation layer formed over an intermetal dielectric (IMD) layer and a plurality of stacked metal layers. A via is etched within the step shape of the substrate to expose a metal layer within the plurality of stacked metal layers. A metal adhesion layer is formed over the oxide layer and within the via. The method includes forming a top metal layer over the metal adhesion layer. The method further includes patterning the metal adhesion layer and the top metal layer to maintain the top metal layer and the metal adhesion layer within the via, and the step shape formed in the oxide layer, to form the bumpstop.

Dependencies are inferred from the claim text.