Manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorJin Ha KIM
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.
Claims15
A semiconductor device comprising:
- a stacked structure including a plurality of conductive layers stacked on top of one another to be spaced apart from each other;
- a channel layer formed in an opening penetrating a cell region of the stacked structure;
- and
- a source layer overlapping the cell region of the stacked structure,
- wherein the source layer includes a surface-treated polysilicon layer.
A semiconductor device comprising:
- a stacked structure including a plurality of conductive layers and a plurality of insulating layers stacked alternately with the plurality of conductive layers;
- a channel layer formed in an opening penetrating a cell region of the stacked structure;
- and
- a polysilicon layer overlapping the cell region of the stacked structure,
- wherein the polysilicon layer includes a rear surface having an increased grain size by surface treatment.
A method of manufacturing a semiconductor device, the method comprising:
- forming a structure including a stacked structure, a channel layer penetrating a cell region of the stacked structure and a source layer overlapping the cell region of the stacked structure, the stacked structure including a plurality of conductive layers stacked on top of one another to be spaced apart from each other;
- and
- performing surface treatment to a rear surface of the source layer,
- wherein the rear surface faces a direction opposite to a direction facing the stacked structure.
Dependencies are inferred from the claim text.